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| NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 MARCH 94 FEATURES * High voltage APPLICATIONS * Telephone dialler circuit MPSA42 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb =25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE 300 300 6 500 680 -55 to +175 UNIT V V V mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 300 300 6 0.1 0.1 0.5 0.9 25 40 40 50 6 MHz pF TYP. MAX. UNIT V V V A A CONDITIONS. IC=100A, IE=0 IC=1mA, IB=0* IE=100A, IC=0 VCB=200V, IE=0 VEB=6V, IC=0 IC=20mA, I B=2mA* IC=20mA, I B=2mA* IC=1mA, VCE=10V* IC=10mA, VCE=10V* IC=30mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) VBE(sat) V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-78 MPSA42 TYPICAL CHARACTERISTICS hFE Static Forward Current Transfer Ratio fT Transition Frequency (MHz) 160 140 120 100 80 60 40 20 VCE=10V 140 120 100 80 60 40 20 0 0.1 VCE=20V 0.1 1.0 10 100 200 1.0 10 100 IC-Collector Current (mA) IC-Collector Current (mA) hFE vs IC VCE (sat) Collector-Emitter Saturation Voltage(Volts) fT vs IC 0.3 1A Single Pulse Test at Tamb=25C 10ms IC-Collector Current Amps 100ms 0.1 1ms 0.2 D.C. 0.01 0.1 IC / IB=10 0 0.1 1.0 10 100 200 0.001 1 10 100 1000 IC-Collector Current (mA) VCE-Collector-Emitter Voltage (Volts) VCE(sat) vs IC Safe operating area 3-79 |
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